Basman N., Aslan N., UZUN O., ÇANKAYA G., KÖLEMEN U.
Microelectronic Engineering, cilt.140, ss.18-22, 2015 (SCI-Expanded, Scopus)
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Yayın Türü:
Makale / Tam Makale
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Cilt numarası:
140
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Basım Tarihi:
2015
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Doi Numarası:
10.1016/j.mee.2015.05.001
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Dergi Adı:
Microelectronic Engineering
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Derginin Tarandığı İndeksler:
Science Citation Index Expanded (SCI-EXPANDED), Scopus
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Sayfa Sayıları:
ss.18-22
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Anahtar Kelimeler:
Diamond-like carbon, MIS Schottky diode, Pressure sensor
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Samsun Üniversitesi Adresli:
Hayır
Özet
In this study, electrodeposited diamond-like carbon (DLC) film was used to fabricate 12 identical Au/DLC/p-Si metal-interlayer-semiconductor (MIS) Schottky diodes. Current-voltage (I-V) measurements were carried out to obtain diodes' parameters. The rectification ratios of the MIS diodes were found between 103 and 104. By using the forward bias I-V characteristics, the average ideality factor (n) and barrier height (Φb) values of Au/DLC/p-Si MIS structures were found as 2.06 and 0.84 eV, respectively. The Φb value of 0.84 eV obtained for Au/DLC/p-Si MIS diode was much higher than the value of 0.34 of conventional Au/p-Si Schottky diode. Cheung-Cheung functions were also used to extract barrier height and series resistance values and the obtained results were compared with I-V method. I-V measurements were also carried out under the hydrostatic pressure in the range of 0.0-2.0 kbar. It was found that barrier height and series resistance values were highly pressure sensitive and increased with the ascending pressure. It was proposed that Au/DLC/p-Si Schottky MIS diode can be used as pressure sensor due to high sensitivity to changing pressure.