IEEE Microwave and Wireless Technology Letters, cilt.35, sa.9, ss.1344-1347, 2025 (SCI-Expanded, Scopus)
This letter presents a wideband (1.8-6 GHz) high efficiency Gallium Nitride (GaN) power amplifier (PA). The design of the PA employs an approach of large signal bandwidth (BW)-current conduction angle (CCA) relationship based on the harmonic distortion (HD) performance. This is a new approach and targets to obtain better efficiency while keeping increase of HD low in the BW. The fabricated PA offers power gain (Pgain) of 9.6 dB, an output power (Pout) of 37.6 dBm, a power added efficiency (PAE) ranging from 42% to 51%, and HD levels below -20 dBc throughout the 1.8-6 GHz frequency band.