1-8 GHz high efficiency single-stage travelling wave power amplifier

Sayginer M., Yazgı M., Kuntman H. H., Virdee B. S.

Analog Integrated Circuits and Signal Processing, cilt.74, sa.1, ss.111-119, 2013 (SCI-Expanded, Scopus) identifier

  • Yayın Türü: Makale / Özet
  • Cilt numarası: 74 Sayı: 1
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1007/s10470-012-9863-2
  • Dergi Adı: Analog Integrated Circuits and Signal Processing
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.111-119
  • Anahtar Kelimeler: GaAs PHEMT, Load-pull technique, Wideband power amplifiers
  • Samsun Üniversitesi Adresli: Hayır

Özet

This paper describes a Class-A/AB wideband power amplifier that comprises of a single-stage transistor travelling wave structure in which capacitive coupling and frequency dependent lossy artificial-line are employed at the input of the active device. The proposed technique significantly enhances the amplifier's gain-bandwidth product, input match and gain flatness performance. To ensure the amplifier delivers a predefined power to the load over its entire operating band 2-to-8 GHz a broadband load-pull technique was applied at the output of the amplifier. To avoid reduction in the amplifier's bandwidth resulting from parasitic capacitive effects associated with the off-chip choke inductor a wideband RF choke was designed. The 1.31 × 2.93 mm2 power amplifier was fabricated using 0.25 μm GaAs pHEMT MMIC process. The measurement results show that the proposed amplifier delivers an average P sat of 29.5 dBm and P out,1 dB of 26 dBm, and the corresponding PAE levels are 55 and 35 % for the P sat and P out,1 dB, respectively. © 2012 Springer Science+Business Media, LLC.